P R O G R A M M E

 

Sunday, June 30

16.00  Registration

20.00   Welcome Party

Monday, July 1

 

7.30            Registration

  9.00  OPENING CEREMONY

 F. Dubecký, SIMC-XII-2002 Chair

 

Session 1:          SI III-V MATERIALS  1

                        Chair: J. Baranowski 

 

9.20           Space-grown SI GaAs and its application

N. F. Chen1,2, X. Zhong1,2, M. Zhang3, and L. Lin1,2

1Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

2National Microgravity Laboratory of Chinese Academy of Scieces, China

3 Hebei Semiconductor Research Institute, Shijiazhuang, China
          Key invited

 

            10.00             Hopping conduction in lithium diffused and annealed  GaAs

J. T. Gudmundsson, H. G. Svavarsson, and H. P. Gíslason

                                Science Institute, University of Iceland, Reykjavík, Iceland

 

10.20 - 10.40            Coffee break

 

Session 2:          SI III-V MATERIALS  2

                        Chair: R. Fornari

 

10.40  Growth of InP substrate crystals by the vertical gradient freeze technique                                U. Sahr and G. Müller

Crystal Growth Laboratory, University Erlangen-Nürnberg, Germany

                        Key invited

 

11.20             Inspection of residual strain in GaAs single crystal as standard ingot form

M. Yamada and T. Chu

Kyoto Institute of Technology, Japan

 

11.40    GaAs for X-imaging and particle detectors

G.I. Ayzenshtat1, D.L. Budnitsky2, V.P. Germogenov3, S.M. Guschin3, O.B. Koretskaya2, L.S. Okaevich3, A.I. Potapov2, O.P. Tolbanov2, A.V. Tyazhev2, A.P. Vorobievd

a Scientific & Production State Enterprise “Semiconductor Devices Research Institute”, Russia, Tomsk

b Siberian Physical Technical Institute ,Russia, Tomsk

c Tomsk State University, Russia, Tomsk

d Scientific State Center “High Energy Physics Institute”, Russia, Protvino Tomsk

 

12.00  CMK, Ltd.: Company profile

13.00 – 14.30            LUNCH

Session 3:         NOVEL SYSTEMS  1

                        Chair: N.F. Chen

 

14.30            LT (Al)GaAs and Al(Ga)As oxides for electronic applications

J. Champlain, C. Zheng, and U. Mishra

                        Electrical and Computer Engineering Department, University of California,

Santa Barbara, CA, USA

Key invited

 

15.10 Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

G. Deligeorgis1, S. Gallis1, M. Androulidaki1, D. Cengher1, Z. Hatzopoulos1, M. Alexe2, V. Dragoi2, E. D. K.-Bitzaros3, G. Halkias3, F. Peiro4 and A. Georgakilas1

1 Microelectronics Research Group, FORTH, IESL and Univ. Crete, Physics Dept., Heraklion-Crete, Greece

2 Max Planck Institute of Microstructure Physics, Halle, Germany,

3 NCSR “Demokritos”, Inst. of Microelectronics, Greece

4 EME, Electronics Dept., University of Barcelona, Spain

 

15.30            Visible room-temperature photoluminescence of the AlN films, prepared by rf magnetron sputtering

V. Ligatchev, T. K. S. Wong, S. F. Yoon, J. Ahn, S. Rusli

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

 

16.00 - 16.30            Coffee break

 

Session 4:          GROUP III-NITRIDES  1

                        Chair: P. Kordoš

 

16.30            Heteroepitaxy of GaN on Si(111)

A. Krost

Otto-von-Guericke Universität Magdeburg, Germany

                        Key invited

 

17.10 Direct determination of the built-in polarization field in InGaN/GaN quantum wells

P. Kiesel1,2, M. Kneissl1 N. M. Johnson1, F. Renner2, and G.H. Döhler2

1PARC,  Palo Alto, CA, U.S.A.

Invited 

               

            17.40            Effects of hydrogenation on AlGaN alloys grown by MOCVD

                        D. Seghier and H. P. Gislason

                            Science Institute, University of Iceland, Reykjavik, Iceland

                               

18.00            Photoenhanced wet etching of n-gallium nitride

J. Škriniarová1, M. Michalka2, F. Uherek1, and P. Kordoš3

1Department of Microelectronics, Slovak University of Technology, Bratislava, Slovakia

2International Laser Center, Bratislava, Slovak Republic

3Institute of Thin Films and Interfaces, Research Centre Jülich, Germany

18.20 High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy

E. Dimakis1, A. Georgakilas1, G. Kittler1, M. Androulidaki1, K. Tsagaraki1, E. Bellet-Almaric2, D. Jalabert2, and N. T. Pelekanos1

1 Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion-Crete and University of Crete, Phys. Dept., Heraklion-Crete, Greece

2Commissariat à l'Energie Atomique, Laboratoire de Physique des Semiconducteurs, Grenoble, France

                           

19.00 - 22.00            OUTDOOR DINNER

 

 

Tuesday, July 2

 

Session 5:          GROUP III-NITRIDES  2

                        Chair: A. Krost

 

            9.00              Novel sensor applications of III-nitrides

M. Eickhoff1, O. Ambacher1, G. Steinhoff1, J. Schalwig2, R. Neuberger2, G. Müller2, and M. Stutzmann1

1Walter Schottky Institute, Technical University Münich, Garching, Germany

2EADS Deutschland GmbH, Corporate Research Centre, Munich, Germany

Key invited

 

9.40 Differences and similarities between  structural properties of GaN grown by different growth methods

Z-Liliental Weber, J. Jasinski, and J. Washburn                       

Lawrence Berkeley National Laboratory Berkeley, CA, U.S.A.

Invited

 

10.00                         Characterization of GaN/InGaN hetero-structures by SEM and CL

R. Fornari1, M. Bosi1, M. Avella2, E. Martín2, and  J. Jimenez2

1CNR-IMEM Institute, Parma, Italy

2Dep. Fisica de la Materia Condensada, ETSII, Uniersity of Valladolid, Spain

           

10.20 - 10.40            Coffee break

 

Session 6:          NOVEL SYSTEMS  2

                        Chair: V. Ligatchev

 

10.40             LT GaMnAs and GaMnN - prospect materials for spintronics

M. Kaminska and A. Twardowski

                        Institute of Experimental PhysicsWarsaw University, Poland

Key invited           

 

11.20            Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniques

P. Šutta, J. Müllerová

Department of Physics, Faculty of Logistics, Military Academy Liptovský Mikuláš, Slovak Republic

11.40            Electrical isolation of ZnO by ion irradiation

S.O. Kucheyev,1 P.N.K. Deenapanray,1 C. Jagadish,1 J.S. Williams,1 Mitsuaki Yano,2 Kazuto Koike,2 Shigehiko Sasa,2 Masataka Inoue,2 and Ken-ichi Ogata3

1Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering,

The Australian National University, Canberra , Australia

2New Materials Research Center and Bio-Venture Center, Osaka Institute of Technology, Japan

3Bio-Venture Center, Osaka Institute of Technology, Japan

Invited

 

12.10 – 13.30            LUNCH

 

13.45               CONFERENCE PHOTO

 

14.00 – 22.00            TRIP TO THE BOJNICE CASTLE

               

 

Wednesday, July 3

 

Session 7:          SiC, II-VI AND OTHER MATERIALS  1

                        Chair: C. Ferrari  

 

9.00            Growth and fundamental properties of GeSi bulk crystals

I. Yonenaga

Institute for Materials Research, Tohoku University, Sendai, Japan

Invited

 

9.30            Optical and structural characterisation of CdTe crystals grown by Physical Vapour Transport and Bridgman methods

N. Armani, C. Ferrari, G. Salviati, F. Bissoli, M. Zha, A. Zappettini, and L. Zanotti

CNR – IMEM Institute, PARMA, Italy

 

9.50          The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC

Bo Keun Kim, Jae Kwon Kim, Jinwook Burm, and Chul An

Department of Electronic Engineering, Sogang University, Seoul, Korea

 

10.10 - 10.30              Coffee break

 

Session 8:          SiC, II-VI AND OTHER MATERIALS  2

                        Chair:            A. Krotkus

 

10.30            A step forward to the growth and characterization of compositionally homogeneous InxGa1-xAs bulk crystal

P. Verma1, M. R. Islam1, M. Suzuki1, M. Fukuzawa1, M. Yamada1, Y. Hanaue2,  K. Kinoshita2, and M. Tatsumi3

1Kyoto Institute of Technology, Japan

2National Space development Agency of Japan, Tsukuba, Japan

3Itami Research Laboratories, Sumitomo Electric Industries Ltd., Osaka, Japan

                        Invited

11.00            Electrical study of 4H-SiC irradiated with swift heavy ions    

E. Kalinina1, G. Onushkin1, D. Davydov1, A. Hallén2, A. Konstantinov3, V.A.Skuratov4, and J.Staňo4

            1Ioffe Institute, St. Petersburg, Russia

2Department of Electronics, Royal Institute of Technology, Kista, Sweden

3Acreo, Electrum 233Kista, Sweden

4Joint Institute for Nuclear Research, Dubna, Russia

 

11.20            Luminescence properties of semi-insulating nominally-undoped CdTe crystals

V. Corregidor1 and E.Diéguez1, M. Zha1, F. Bissoli2, A. Zappettini2, and L. Zanotti2

                                1Departamento de Física de Materiales, Universidad Autónoma de Madrid, Spain

2IMEM-CNR,Parma, Italy

 

13.00 – 14.30            LUNCH

 

Session 9:          STRUCTURE & CHARACTERIZATION

                        Chair: Ch. Jagadish

 

            14.30            High quality X-ray imaging for semiconductor wafer characterisation

                        T. Baumbach 1, 2), P. Mikulik1), D. Korytar1), P. Pernot1, 2), D. Lübbert 1, 2),

                        M. Herms 1 , L. Helfen1, 2), and Ch. Landesberger3

1Fraunhofer- Institut für Zerstörungsfreie Prüfverfahren,EADQ, Dresden, Germany,

                                2European Synchrotron Radiation Facility, Grenoble, France

3Fraunhofer Institut für Zuverlässigkeit und Mikrosystemtechnik, München, Germany

            Invited

 

            15.00            On the alpha particle induced degradation in n-type GaAs layers

N. Arpatzanis1, G. Constantinidis2, G. J. Papaioannou1, and M. Papastamatiou1

1University of Athens, Physics Department, Solid State Physics Section, Panepsitimiopolis Zografos, Greece

2FORTH IESL, Heraclion Crete, Greece

 

15.20             Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique

K. Jarašiūnas,  M. Sūdžius, and R.Aleksiejūnas

Institute of Materials Science and Applied Research, Vilnius University, Lithuania

 

15.40            Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LTG MBE GaAs interface

F. Dubecký1, B. Zaťko1, C. Ferrari2, V. Šmatko1, A. Förster3, and P. Kordoš3

1IEE SAS, Bratislava, Slovakia

2IMEM-CNR, Parma, Italy

3Institute of Thin Films and Interfaces, Juelich, Germany

4Institute of  Physics CAS, Prague, Czech Republic

           

16.00 - 16.20            Coffee break

 

 

Session 10:          THz ELECTRONICS

                        Chair: Ch. Tu

 

16.20 Few-cycle THz pulse generation and spectroscopy of semiconductor nanostructures

K. Unterrainer1, R. Bratschitsch1, T. Müller1, R. Kersting2,

J.N. Heyman2, and G. Strasser1

1Institute for Solid State Electronics, Technical University Vienna,, Austria

2Rensselaer Polytechnic Institute, Troy, NY, U.S.A.

3Macalester College, St. Paul, MN, U.S.A.

                        Invited

 

            16.50            Single-heterojunction barrier diode at terahertz frequency

P. Horák

Brno University of Technology, Faculty of Electrical Engineering and Communication, Dept. of Microelectronics, Czech Republic

                               

            17.10            Terahertz generation in GaAs:As photoconductive emitters

                        J. Darmo, T. Müller, G. Strasser, and K. Unterrainer

Institut für Festkörperelektronik, Technische Universität Wien, Vienna, Austria

 

Session 11:          BRIEF POSTERS REVIEW

                  Chairs: P. Kiesel & Z. Liliental-Weber

 

17.30      Short 3 minute ORAL presentation of each poster

 

18.30 - 19.30            DINNER

 

19.30 – 22.00     POSTER SESSION, EXHIBITION

 

 

Thursday, July 4

 

Session 12:          DEVICES

            Chair:   P. G. Pelfer

 

9.00            GaAs sensor systems for medical applications

J. Ludwig

Fakultaet fuer Physik, Albert Ludwigs Universitaet Freiburg, Deutschland  

                        Key invited

           

9.40            Role of semi-insulating GaAs detector topology in detection performances

A. Perďochová 1, F. Dubecký 2, T. Ly Anh 1, V. Nečas 1, P. Boháček 2, and M. Sekáčová 2

1Department of Nuclear Physics and Technology, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava,  Slovakia

2 Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava

 

10.00 Influence of temperature in spectrometric performances of the radiation detector based on semi-insulating GaAs

B. Zaťko1, F. Dubecký1, and V. Nečas2

1Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

2Faculty of Electrical Engineering and Information Technology, Slovak University of Technology Bratislava, Slovakia

 

10.20 - 10.40              Coffee break

                       

Session 13:         DEVICES & APPLICATIONS        

Chair:  J. Ludwig

 

10.40      Low-Bandgap Nitrides: Issues and Applications

Ch. W. Tu

Department of Electrical and Computer Engineering, University of California, San Diego La Jolla, U.S.A.

Key invited

 

11.20 Performance of radiation detector based on semi-insulating InP with improved electrode system technology

F. Dubecký1, P. G. Pelfer2, A. Owens3, B. Zaťko1, and V. Šmatko1

1 IEE SAS Bratislava, Slovakia

2 UF and INFN Florence, Italy

3 ESA/ESTEC, Noordwijk, Netherlands

                        Invited

 

11.40 Evaluation of GaAs and InP MSM detectors intended for collection of pulsed X-ray emission from laser plasma

L. Ryć1, F. Dubecký2, B. Pura3, M. Pfeifer4, and W. Słysz5

1Institute of Plasma Physics and Laser Microfusion, Warsaw, Poland

2Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

3Faculty of Physics, Warsaw University of Technology, Poland

4Institute of Physics, ASCR, Prague , Czech Republic

5Institute of Electron Technology, Warsaw, Poland

 

12.00 Effects of surface deep levels on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs

Y. Mitani, A. Wakabayashi, and K. Horio

Faculty of Systems Engineering, Shibaura Institute of Technology, Fukasaku, Japan

 

12.20            The fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using (Ba0.5,Sr0.5)TiO3 gate dielectric

                        Y.-Rung Liu and J. Ya-min Lee

Department of Electrical Engineering,Tsing-Hua University, Hsinchu, Taiwan, Republic of China

 

13.00 - 14.30            LUNCH

Session 14:          LOW DIMENSIONAL SYSTEMS  1

                        Chair:  P. Lefebvre

 

14.30      On one-dimensional assembly of quantum structures           

L. Samuelson

Lund University, Solid State Physics/the Nanometer Consortium, Sweden

Key invited

 

15.10            Two- and three-dimensional arrays of nanoscale As clusters

                        in low-temperature grown GaAs

N. A. Bert1, N.A. Cherkashin1, V. V. Chaldyshev1, A. Claverie2, V. V. Preobrazhenskii3, M. A. Putyato3, B. R. Semyagin3, and P. Werner4

1 Ioffe Physico-Technical Institute, St. Petersburg, Russia

2 CEMES/CNRS, France

3 Institute of Semiconductor Physics, Novosibirsk, Russia

4 Max-Plank-Institut fuer Mikrostrukturphysik, Halle/Sale,  Germany

 

15.30 Leakage current in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer

                        C. A. Barrios and S. Lourdudoss

                        Laboratory of Materials and Semiconductor Physics, Royal Institute

                        of Technology, KTH-Electrum 229, Kista, Sweden

 

15.50 Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodes

                        A. Hori, D. Yasunaga, and K. Fujiwara

                        Kyushu Institute of Technology, Tobata, Japan

               

16.10 - 16.30            Coffee break

 

Session 15:          LOW DIMENSIONAL SYSTEMS  2

                  & NONSTOICHIOMETRIC III-Vs

                        Chair:            L. Samuelson

 

16.30      Optical properties of group-III nitride based quantum wells and quantum boxes

                        P. Lefebvre

Charge de Recherche – CNRS, Groupe d'Etude des Semiconducteurs, Universite Montpellier II - France.

                        Key invited

 

17.10 Investigation of morphology and photoelectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

                        I. A. Karpovich, S. B. Levichev, N. V. Baidus, B. N. Zvonkov, and D. O. Filatov

                        University of Nizhny Novgorod, Nizhny Novgorod 603950, Russia

 

17.30 A new concept for highly efficient photomixers based on quasi-ballistic transport and thin LT-GaAs recombination layers

                        P. Kiesel, M. Eckardt, A. Schwanhäußer, L. Robledo, A. Friedrich,

                        P. Pohl, F. Renner, and G. H. Döhler

            Institute of Technical Physics I, University of Erlangen, Germany

 

17.50      Complete structural and optical characterization of InGaN/GaN multiple quantum wells

N. Armani1, C. Ferrari1, M. Berti2, A. Coati2, F. Rossi1, E.Villaggi1, L.Lazzarini1), L.Nasi1 and A.V. Drigo2, A. Passaseo3 and R. Cingolani3

1NR – IMEM Institute, Parma, Italy

2INFM at Physic Department, Padova University, Padova, Italy

3INFM National Nanotechnology Laboratory, Lecce, Italy 

 

18.10            Electron and hole trapping parameters of low-temperature-grown GaAs

J-F. Roux1, J-L. Coutaz1, S. Marcinkevicius2, J. Siegert2, M. Kaminska3,

A. Wolos3, and A. Krotkus4

1LAHC, University of Savoie, France

2IMIT, Royal Institute of Technology, Electrum 229, Kista, Sweden

3IEP, University of Warsaw, Poland

4Semiconductor Physics Institute, Vilnius, Lithuania

 

19.30               CONFERENCE DINNER

 

 

Friday, July 5

 

Session 16:          FUTURE ASPECTS OF THE SIMC

                        Chair: International Advisory Committee

9.0       ROUND TABLE:

·    NOVEL SYSTEMS

·    OPENED DISCUSSION

 

10.00                              CLOSING ADDRESS

 

11.30 - 13.00            LUNCH

 

13.00          BUS DEPARTURE TO BRATISLAVA

 

 

 

 

 

 

 

 

 

 

 

 

 

19.30 - 22.00              POSTER SESSION

Wednesday, July 3

17.30 - 18.30      Short ORAL presentation of posters (3 minutes each)

 

 

P.1.            Photocurrent and photoluminescence in Fe-doped InP

            A. Alvarez1, M. A. González1,M. Avella1, J. Jiménez1,  and R. Fornari2

1Dep. Fisica de la Materia Condensada, ETSII, University of Valladolid, Valladolid, Spain

2CNR-IMEM Institute, Parma, Italy

 

P.2.             Photoluminescence characterization of interface abruptness of GaAs/AlGaAs quantum wells grown on (411)A and (100) GaAs substrates

T. Kusano1, A. Satake1, K. Fujiwara1, S. Shimomura2, T. Kitada2, and S. Hiyamizu2

1Kyushu Institute of Technology, Tobata, Japan

         2Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

 

P.3.            PECVD nitrogen doped a-SiC:H films: Properties

         J. Huran1, I. Hotový2, A. P. Kobzev3, and N. I. Balalykin3

1) Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

2) Faculty of Electrical Engineering and Information Technology, Slovak Technical University, Bratislava, Slovakia

3) Joint Institute for Nuclear Research, Dubna, Russia

 

P.4.      Two-dimensional mapping of composition in bulk InxGa1-xAs crystals using photoluminescence

Md. Rafiqul Islam1, M. Suzuki1, P. Verma2, M. Yamada1, M. Tatsumi3, Y. Hanaue4, and K. Kinoshita4

         1Department of Electronics and Information Science, Kyoto Institute of Technology,

Japan

2Venture Laboratory, Kyoto Institute of Technology, Japan

3Sumitomo Electric Industries Ltd., Itami Works, Hyogo, Japan

4National Space Development Agency of Japan, Tsukuba, Japan

 

P.5.      Non-uniform photocurrent transport and tunneling resonances

in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells

K. Kawasaki1, K. Fujiwara2, and N. Sano3

         1Sendai National College of Technology, Aoba, Sendai

2Kyushu Institute of Technology, Tobata, Kitakyushu, Japan

3Kwansei Gakuin University, Nishinomiya, Japan

 

P.6.            Electronic spectrum of defects in SiOCH dielectric films  measured by deep level transient spectroscopy

         V. Ligatchev, T. S. Wong, B. Liu, and  Rusli

School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

P.7.      Laser technology in the formation of AuPt and AuPtTi contacts

P. Macháč1, V. Myslík1, V. Peřina2 , and J. Zlámal1

1Institute of Chemical Technology, Czech Republic,

2Nuclear Physics Institute of Academy Sciences, Řež, Czech Republic

 

P.8.            Electric field distribution in chromium compensated GaAs

A. Tyazhev, D. Budnitsky, and O. Tolbanov

         Tomsk Siberian Physical Technical Institute. Russia

 

P.9.      Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN

J. V. Vaitkus1, E.Gaubas1, V.Kazukauskas1, Y.Lacroix2, S Sakai2, K.Smith3, J.Storasta1 and T. Wang2

1 - Vilnius University, Institute of Materials Science and Applied Research,

Vilnius, Lithuania

2 - University of Tokushima, SVBL,, Tokushima, Japan

3 – Glasgow University of, Department of Physics and Astronomy, Glasgow, UK

 

P.10.   Gamma radiation hardness of bulk semi-insulating GaAs detectors

T. Ly Anh1, A. Perďochová1, V. Nečas1, P. Boháček2, and M. Sekáčová2

1Department of Nuclear Physics and Technology, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

2Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

 

P.11.    Study of the nature of reverse bias electrical conductivity of Nb2O5 insulating films in capacitor structure of niobium

         Leonid I. Skatkov

PCB “Argo”, Ltd., Beer Sheva, Israel

 

P.12.             Photoluminescence studies of high purity semi-insulating InP

         B. Surma1, A. Wnuk1, F. Dubecký2, and M. Piersa1

1 Institute of Electronic Materials Technology, Warszawa,

2 Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

 

P.13.            Ultrafast carrier trapping in high energy ion implanted indium phosphide

         C. Carmody1, H. Boudinov2, H. H. Tan1, C. Jagadish1, L.V. Dao2, and M. Gal2

1Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia

2 School of Physics, University of New South Wales, Sydney, Australia

 

P.14.             Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapour deposition

Q. Gao, H. H. Tan, C. Jagadish, and Prakash N. K. Deenapanray

Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia

 

P.15.    The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for non-volatile memory applications

Chun-Lin Hou and J. Ya-min Lee

Department of Electrical Engineering

Tsing-Hua University, Hsinchu, Taiwan, Republic of China

 

P.16.             Electrical properties of semi-insulating GaAs irradiated with neutrons

P. Boháček, M. Morvic, J. Betko, and J. Huran

Institute of Electrical Engineering, Slovak Academy of Sciences,  Bratislava,

Slovak Republic

 

P.17.    The influence of Glow-Discharge cleaning of Ge/Pd-GaAs on the specific contact resistivity

Jan Zlámal, Petr Macháč, and Vladimír Myslík

Institute of Chemical Technology in Prague, Dept. of Solid State Engineering,

Prague, Czech Republic

 

P.18.            Subband energies in gated delta-doped semiconductors

            J. Osvald

            Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia