P R O G R A M M E
Sunday,
June 30
|
16.00 Registration
20.00 Welcome Party
Monday,
July 1
|
7.30 Registration
9.00 OPENING CEREMONY
F. Dubecký, SIMC-XII-2002 Chair
9.20 Space-grown
SI GaAs and its application
N. F. Chen1,2, X. Zhong1,2, M. Zhang3,
and L. Lin1,2
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
2National Microgravity Laboratory of Chinese Academy of Scieces, China
3 Hebei Semiconductor Research Institute, Shijiazhuang, China
Key invited
10.00
Hopping
conduction in lithium diffused and annealed
GaAs
J. T. Gudmundsson, H. G.
Svavarsson, and H. P. Gíslason
Science Institute,
University of Iceland, Reykjavík, Iceland
10.20 - 10.40 Coffee
break
Chair: R. Fornari
10.40 Growth of InP substrate crystals by the
vertical gradient freeze technique U.
Sahr and G. Müller
Crystal Growth Laboratory,
University Erlangen-Nürnberg, Germany
Key
invited
11.20
Inspection of residual strain in GaAs single crystal as standard ingot form
M. Yamada and T. Chu
11.40 GaAs for X-imaging
and particle detectors
d Scientific State
Center “High Energy Physics Institute”, Russia, Protvino Tomsk
12.00 CMK, Ltd.: Company profile
13.00 – 14.30 LUNCH
Session
3: NOVEL SYSTEMS 1
Chair: N.F. Chen
14.30 LT (Al)GaAs and Al(Ga)As oxides
for electronic applications
J. Champlain, C. Zheng, and U. Mishra
Electrical and Computer
Engineering Department, University of California,
Santa Barbara, CA, USA
Key invited
15.10 Properties of GaAs/Si
heterostructure material fabricated by low temperature wafer bonding using a
spin-on-glass intermediate layer
G. Deligeorgis1, S. Gallis1,
M. Androulidaki1, D. Cengher1, Z. Hatzopoulos1,
M. Alexe2, V. Dragoi2, E. D. K.-Bitzaros3,
G. Halkias3, F. Peiro4 and A. Georgakilas1
1 Microelectronics Research Group, FORTH, IESL
and Univ. Crete, Physics Dept., Heraklion-Crete, Greece
2 Max Planck
Institute of Microstructure Physics, Halle, Germany,
3 NCSR “Demokritos”,
Inst. of Microelectronics, Greece
4 EME, Electronics Dept.,
University of Barcelona, Spain
15.30 Visible
room-temperature photoluminescence of the AlN films, prepared by rf magnetron
sputtering
V.
Ligatchev, T. K. S. Wong, S. F. Yoon, J. Ahn, S. Rusli
School of Electrical and
Electronic Engineering, Nanyang Technological University, Singapore
16.00 - 16.30 Coffee
break
Session
4: GROUP III-NITRIDES 1
Chair: P. Kordoš
16.30 Heteroepitaxy
of GaN on Si(111)
A. Krost
Otto-von-Guericke Universität Magdeburg,
Germany
Key
invited
17.10 Direct
determination of the built-in polarization field in InGaN/GaN quantum wells
P. Kiesel1,2, M. Kneissl1
N. M. Johnson1, F. Renner2, and G.H. Döhler2
1PARC, Palo Alto, CA, U.S.A.
Invited
17.40 Effects of hydrogenation on AlGaN alloys grown by MOCVD
D. Seghier and H. P. Gislason
Science Institute, University of Iceland, Reykjavik,
Iceland
18.00 Photoenhanced
wet etching of n-gallium nitride
J.
Škriniarová1, M. Michalka2,
F. Uherek1, and P. Kordoš3
1Department of
Microelectronics, Slovak University of Technology, Bratislava, Slovakia
2International
Laser Center, Bratislava, Slovak Republic
3Institute of Thin Films and
Interfaces, Research Centre Jülich, Germany
18.20 High quality
quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy
E. Dimakis1, A. Georgakilas1,
G. Kittler1, M. Androulidaki1, K. Tsagaraki1,
E. Bellet-Almaric2, D. Jalabert2, and N. T. Pelekanos1
1 Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for
Research and Technology-Hellas (FORTH), Heraklion-Crete and University
of Crete, Phys. Dept., Heraklion-Crete, Greece
2Commissariat
à l'Energie Atomique, Laboratoire de Physique des Semiconducteurs,
Grenoble, France
19.00 - 22.00 OUTDOOR
DINNER
Tuesday,
July 2
|
Session
5: GROUP III-NITRIDES 2
Chair: A. Krost
M.
Eickhoff1, O. Ambacher1, G.
Steinhoff1, J. Schalwig2, R. Neuberger2, G.
Müller2, and M. Stutzmann1
1Walter Schottky Institute, Technical University Münich, Garching, Germany
2EADS Deutschland GmbH, Corporate Research Centre, Munich, Germany
Key invited
9.40 Differences and
similarities between structural
properties of GaN grown by different growth methods
Z-Liliental
Weber, J. Jasinski, and J. Washburn
Lawrence Berkeley
National Laboratory Berkeley, CA, U.S.A.
R. Fornari1, M. Bosi1, M.
Avella2, E. Martín2, and
J. Jimenez2
1CNR-IMEM
Institute, Parma, Italy
2Dep.
Fisica de la Materia Condensada, ETSII, Uniersity of Valladolid, Spain
10.20 - 10.40 Coffee
break
Session
6: NOVEL SYSTEMS 2
Chair: V. Ligatchev
10.40
LT GaMnAs and GaMnN - prospect
materials for spintronics
Key invited
11.20 Lattice stress
gradient formation in oxide films deposited on substrates when used sputtering
techniques
Department of Physics, Faculty of Logistics, Military
Academy Liptovský Mikuláš, Slovak Republic
11.40 Electrical isolation of ZnO by
ion irradiation
1Department
of Electronic Materials Engineering, Research School of Physical Sciences and
Engineering,
The Australian National
University, Canberra ,
Australia
2New
Materials Research Center and Bio-Venture Center, Osaka Institute of
Technology, Japan
3Bio-Venture
Center, Osaka Institute of Technology, Japan
Invited
12.10 – 13.30 LUNCH
13.45 CONFERENCE PHOTO
14.00 – 22.00 TRIP
TO THE BOJNICE CASTLE
Wednesday,
July 3
|
Session
7: SiC, II-VI AND OTHER
MATERIALS 1
Chair: C. Ferrari
9.00 Growth and
fundamental properties of GeSi bulk crystals
I.
Yonenaga
Institute for Materials Research, Tohoku University, Sendai, Japan
Invited
9.30 Optical and
structural characterisation of CdTe crystals grown by Physical Vapour Transport
and Bridgman methods
N. Armani, C. Ferrari, G. Salviati, F.
Bissoli, M. Zha, A. Zappettini, and L. Zanotti
CNR – IMEM Institute, PARMA, Italy
9.50
The thermal stability of Ni and Ni/Au ohmic
contacts to n-type 4H-SiC
Bo Keun Kim, Jae Kwon Kim, Jinwook Burm, and Chul An
Department of Electronic Engineering, Sogang University, Seoul, Korea
10.10 - 10.30
Coffee break
Session
8: SiC, II-VI AND OTHER
MATERIALS 2
Chair: A. Krotkus
10.30 A step forward to the growth and characterization of
compositionally homogeneous InxGa1-xAs bulk crystal
P.
Verma1, M. R. Islam1,
M. Suzuki1, M. Fukuzawa1, M. Yamada1, Y.
Hanaue2, K. Kinoshita2,
and M. Tatsumi3
1Kyoto Institute of Technology, Japan
2National Space development Agency of Japan, Tsukuba, Japan
3Itami Research Laboratories, Sumitomo Electric Industries Ltd., Osaka,
Japan
Invited
11.00 Electrical study of 4H-SiC
irradiated with swift heavy ions
E. Kalinina1, G. Onushkin1, D.
Davydov1, A. Hallén2, A. Konstantinov3,
V.A.Skuratov4, and J.Staňo4
1Ioffe
Institute, St. Petersburg, Russia
2Department of Electronics,
Royal Institute of Technology, Kista, Sweden
3Acreo, Electrum 233Kista,
Sweden
4Joint Institute for Nuclear
Research, Dubna, Russia
11.20 Luminescence properties of
semi-insulating nominally-undoped CdTe crystals
V. Corregidor1 and E.Diéguez1,
M. Zha1, F. Bissoli2, A. Zappettini2,
and L. Zanotti2
1Departamento de Física de Materiales, Universidad Autónoma de Madrid,
Spain
2IMEM-CNR,Parma, Italy
13.00 – 14.30 LUNCH
Session
9: STRUCTURE &
CHARACTERIZATION
Chair: Ch. Jagadish
14.30 High quality X-ray imaging for semiconductor wafer
characterisation
T.
Baumbach 1, 2), P. Mikulik1), D. Korytar1),
P. Pernot1, 2), D. Lübbert 1, 2),
M.
Herms 1 , L. Helfen1, 2), and Ch. Landesberger3
1Fraunhofer- Institut für
Zerstörungsfreie Prüfverfahren,EADQ, Dresden, Germany,
2European Synchrotron
Radiation Facility, Grenoble, France
3Fraunhofer Institut für Zuverlässigkeit
und Mikrosystemtechnik, München, Germany
Invited
15.00 On the alpha particle
induced degradation in n-type GaAs layers
N. Arpatzanis1, G. Constantinidis2, G. J.
Papaioannou1, and M. Papastamatiou1
1University of Athens, Physics Department, Solid State Physics Section,
Panepsitimiopolis Zografos, Greece
2FORTH IESL, Heraclion Crete,
Greece
15.20 Deep-trap
governed carrier dynamics in semi-insulating crystals analyzed by time-resolved
four-wave mixing technique
K. Jarašiūnas, M. Sūdžius, and R.Aleksiejūnas
Institute of
Materials Science and Applied Research, Vilnius University, Lithuania
15.40 Indication of minority carrier
extraction at the bulk semi-insulating GaAs/As-implanted and LTG MBE GaAs
interface
F. Dubecký1, B. Zaťko1, C.
Ferrari2, V. Šmatko1, A. Förster3, and P.
Kordoš3
1IEE SAS, Bratislava,
Slovakia
2IMEM-CNR, Parma, Italy
3Institute of Thin Films and
Interfaces, Juelich, Germany
4Institute of Physics CAS, Prague, Czech Republic
16.00 - 16.20 Coffee
break
Session
10: THz ELECTRONICS
Chair: Ch. Tu
16.20 Few-cycle
THz pulse generation and spectroscopy of semiconductor nanostructures
1Institute for Solid State Electronics, Technical University Vienna,,
Austria
2Rensselaer Polytechnic Institute, Troy, NY, U.S.A.
3Macalester College, St. Paul, MN, U.S.A.
Invited
16.50 Single-heterojunction barrier
diode at terahertz frequency
P. Horák
Brno University of Technology, Faculty of Electrical
Engineering and Communication, Dept. of Microelectronics, Czech Republic
17.10 Terahertz generation in
GaAs:As photoconductive emitters
J. Darmo, T. Müller, G. Strasser,
and K. Unterrainer
Session
11: BRIEF POSTERS REVIEW
Chairs: P. Kiesel & Z. Liliental-Weber
17.30
Short 3 minute ORAL presentation of each poster
18.30 - 19.30 DINNER
19.30 – 22.00 POSTER SESSION, EXHIBITION |
Thursday, July 4 |
Session 12: DEVICES
Chair: P. G. Pelfer
9.00 GaAs sensor systems for medical
applications
Key
invited
9.40 Role of semi-insulating GaAs
detector topology in detection performances
A. Perďochová
1, F. Dubecký 2, T.
Ly Anh 1, V. Nečas 1, P. Boháček 2, and M.
Sekáčová 2
1Department
of Nuclear Physics and Technology, Faculty of Electrical Engineering and
Information Technology, Slovak University of Technology, Bratislava, Slovakia
2 Institute
of Electrical Engineering, Slovak Academy of Sciences, Bratislava
10.00 Influence
of temperature in spectrometric performances of the radiation detector based on
semi-insulating GaAs
B. Zaťko1, F. Dubecký1, and
V. Nečas2
1Institute
of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia
2Faculty of Electrical Engineering and Information
Technology, Slovak University of Technology Bratislava, Slovakia
10.20 - 10.40
Coffee break
Session
13: DEVICES & APPLICATIONS
Chair: J. Ludwig
10.40 Low-Bandgap Nitrides: Issues and Applications
Ch. W. Tu
Department of Electrical and
Computer Engineering, University of California, San Diego La Jolla, U.S.A.
Key invited
11.20 Performance
of radiation detector based on semi-insulating InP with improved electrode
system technology
F. Dubecký1, P. G. Pelfer2, A. Owens3,
B. Zaťko1, and V. Šmatko1
1 IEE SAS Bratislava, Slovakia
2 UF and INFN Florence, Italy
3 ESA/ESTEC, Noordwijk, Netherlands
Invited
11.40 Evaluation
of GaAs and InP MSM detectors intended for collection of pulsed X-ray emission
from laser plasma
1Institute of Plasma
Physics and Laser Microfusion, Warsaw, Poland
2Institute of
Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia
3Faculty of Physics,
Warsaw University of Technology, Poland
4Institute of
Physics, ASCR, Prague , Czech Republic
5Institute of
Electron Technology, Warsaw, Poland
12.00 Effects
of surface deep levels on breakdown characteristics of narrowly-recessed-gate
GaAs MESFETs
12.20 The fabrication and characterization of
metal-oxide-semiconductor field-effect transistors and gated diodes using (Ba0.5,Sr0.5)TiO3
gate dielectric
Y.-Rung Liu and J. Ya-min Lee
Department of Electrical Engineering,Tsing-Hua University, Hsinchu,
Taiwan, Republic of China
13.00 - 14.30 LUNCH
Session 14: LOW DIMENSIONAL SYSTEMS 1
Chair:
P. Lefebvre
14.30
On one-dimensional assembly of quantum structures
L. Samuelson
Lund University, Solid State Physics/the Nanometer Consortium, Sweden
Key invited
15.10 Two- and three-dimensional
arrays of nanoscale As clusters
in
low-temperature grown GaAs
N. A. Bert1, N.A. Cherkashin1, V. V.
Chaldyshev1, A. Claverie2, V. V. Preobrazhenskii3,
M. A. Putyato3, B. R. Semyagin3, and P. Werner4
1 Ioffe Physico-Technical Institute, St. Petersburg,
Russia
2 CEMES/CNRS, France
3 Institute of Semiconductor Physics, Novosibirsk,
Russia
4 Max-Plank-Institut fuer Mikrostrukturphysik,
Halle/Sale, Germany
15.30 Leakage current in
GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating
GaInP:Fe burying layer
C. A. Barrios and S. Lourdudoss
Laboratory of Materials and
Semiconductor Physics, Royal Institute
of Technology, KTH-Electrum 229,
Kista, Sweden
15.50 Competitive capture and
escape processes of electrically injected carriers in blue InGaN single quantum
well light emitting diodes
A. Hori, D. Yasunaga, and K. Fujiwara
Kyushu Institute of Technology,
Tobata, Japan
16.10 - 16.30 Coffee
break
Session 15: LOW DIMENSIONAL SYSTEMS 2
& NONSTOICHIOMETRIC
III-Vs
Chair: L.
Samuelson
16.30
Optical properties of group-III nitride based quantum wells and quantum
boxes
Charge
de Recherche – CNRS, Groupe d'Etude des Semiconducteurs, Universite Montpellier
II - France.
Key invited
17.10 Investigation
of morphology and photoelectronic properties of InGaAs/GaAs heterostructures
with combined quantum well and self-organized quantum dot layers
I. A. Karpovich, S. B. Levichev,
N. V. Baidus, B. N. Zvonkov, and D. O. Filatov
University of Nizhny Novgorod, Nizhny Novgorod
603950, Russia
17.30 A new concept for highly
efficient photomixers based on quasi-ballistic transport and thin LT-GaAs
recombination layers
P. Kiesel, M. Eckardt, A.
Schwanhäußer, L. Robledo, A. Friedrich,
P. Pohl, F. Renner, and G. H. Döhler
Institute of
Technical Physics I, University of Erlangen, Germany
17.50 Complete
structural and optical characterization of InGaN/GaN multiple quantum wells
1NR – IMEM Institute, Parma, Italy
2INFM at Physic
Department, Padova University, Padova, Italy
3INFM National Nanotechnology Laboratory, Lecce, Italy
18.10 Electron and hole trapping
parameters of low-temperature-grown GaAs
J-F.
Roux1, J-L. Coutaz1, S. Marcinkevicius2, J.
Siegert2, M. Kaminska3,
A.
Wolos3, and A. Krotkus4
1LAHC, University of Savoie, France
2IMIT, Royal Institute of Technology, Electrum 229, Kista, Sweden
3IEP, University of Warsaw, Poland
4Semiconductor Physics
Institute, Vilnius, Lithuania
19.30 CONFERENCE
DINNER
Friday, July 5 |
9.0
ROUND TABLE:
· NOVEL SYSTEMS
·
OPENED DISCUSSION
10.00
CLOSING ADDRESS |
11.30 - 13.00 LUNCH
13.00 BUS DEPARTURE TO BRATISLAVA
19.30 - 22.00 POSTER SESSION Wednesday, July 3 17.30 - 18.30 Short ORAL presentation of posters (3 minutes each) |
1Dep. Fisica de la Materia Condensada, ETSII,
University of Valladolid, Valladolid, Spain
2CNR-IMEM Institute, Parma, Italy
P.2. Photoluminescence characterization
of interface abruptness of GaAs/AlGaAs quantum wells grown on (411)A and (100)
GaAs substrates
T. Kusano1, A.
Satake1, K. Fujiwara1, S. Shimomura2,
T. Kitada2, and S. Hiyamizu2
1Kyushu Institute of
Technology, Tobata, Japan
2Faculty of
Engineering Science, Osaka University, Toyonaka, Osaka, Japan
P.3. PECVD nitrogen doped
a-SiC:H films: Properties
J. Huran1, I. Hotový2, A.
P. Kobzev3, and N. I. Balalykin3
1) Institute of
Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia
2) Faculty of
Electrical Engineering and Information Technology, Slovak Technical University,
Bratislava, Slovakia
3) Joint Institute for
Nuclear Research, Dubna, Russia
P.4. Two-dimensional mapping of
composition in bulk InxGa1-xAs crystals using
photoluminescence
1Department of
Electronics and Information Science, Kyoto Institute of Technology,
Japan
2Venture Laboratory, Kyoto Institute of Technology, Japan
3Sumitomo Electric Industries Ltd., Itami Works, Hyogo, Japan
4National Space
Development Agency of Japan, Tsukuba, Japan
P.5. Non-uniform
photocurrent transport and tunneling resonances
in composite
InGaAs/AlGaAs and GaAs/AlGaAs quantum wells
K. Kawasaki1, K. Fujiwara2, and N. Sano3
1Sendai National College of Technology, Aoba,
Sendai
2Kyushu Institute of
Technology, Tobata, Kitakyushu, Japan
3Kwansei Gakuin
University, Nishinomiya, Japan
P.6. Electronic spectrum
of defects in SiOCH dielectric films
measured by deep level transient spectroscopy
V. Ligatchev, T. S. Wong, B. Liu, and Rusli
School of Electrical and Electronic Engineering, Nanyang Technological
University, Singapore
P.7. Laser technology in the
formation of AuPt and AuPtTi contacts
P. Macháč1,
V. Myslík1, V. Peřina2 , and J. Zlámal1
1Institute of Chemical Technology, Czech
Republic,
2Nuclear Physics Institute of
Academy Sciences, Řež, Czech Republic
P.9. Space charge effects and carrier capture transient
behaviour in semi-insulating GaAs and GaN
J. V. Vaitkus1, E.Gaubas1,
V.Kazukauskas1, Y.Lacroix2, S Sakai2, K.Smith3,
J.Storasta1 and T. Wang2
1 - Vilnius University, Institute of Materials Science and Applied Research,
Vilnius, Lithuania
2 - University of Tokushima, SVBL,, Tokushima, Japan
3 – Glasgow University of, Department of Physics and Astronomy, Glasgow, UK
P.10. Gamma radiation hardness of bulk
semi-insulating GaAs detectors
T. Ly Anh1, A. Perďochová1, V. Nečas1, P.
Boháček2, and M. Sekáčová2
1Department of Nuclear Physics and Technology,
Faculty of Electrical Engineering and Information Technology, Slovak University
of Technology, Bratislava, Slovakia
2Institute of Electrical Engineering, Slovak
Academy of Sciences, Bratislava, Slovakia
P.11. Study of the nature of reverse bias
electrical conductivity of Nb2O5 insulating films in
capacitor structure of niobium
PCB “Argo”, Ltd., Beer Sheva, Israel
P.12. Photoluminescence
studies of high purity semi-insulating InP
1 Institute of Electronic
Materials Technology, Warszawa,
2 Institute of Electrical
Engineering, Slovak Academy of Sciences, Bratislava, Slovakia
P.13. Ultrafast carrier
trapping in high energy ion implanted indium phosphide
1Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australia
2 School of Physics,
University of New South Wales, Sydney, Australia
P.14. Influence of isochronal annealing on the evolution
of hole traps in GaAsN epilayers grown by metalorganic chemical vapour
deposition
Q. Gao, H. H. Tan, C.
Jagadish, and Prakash N. K. Deenapanray
Department of Electronic Materials Engineering,
Research School of Physical Sciences and Engineering, The Australian National
University, Canberra, Australia
P.15. The capacitance-voltage characteristics of metal-ferroelectric-insulator-silicon structures for
non-volatile memory applications
Department of
Electrical Engineering
Tsing-Hua
University, Hsinchu, Taiwan, Republic of China
P.16.
Electrical properties of
semi-insulating GaAs irradiated with neutrons
P.
Boháček, M. Morvic, J. Betko, and J. Huran
Institute
of Electrical Engineering, Slovak Academy of Sciences, Bratislava,
Slovak
Republic
P.17. The influence of
Glow-Discharge cleaning of Ge/Pd-GaAs on the specific contact resistivity
Jan Zlámal, Petr Macháč, and Vladimír
Myslík
Institute of Chemical Technology in Prague, Dept. of Solid State Engineering,
Prague, Czech Republic
P.18. Subband energies in gated
delta-doped semiconductors
J. Osvald
Institute of Electrical
Engineering, Slovak Academy of Sciences, Bratislava, Slovakia