No

NAME

TITLE

INSTITUTION

EVALUATION

1

Armani

N.

Optical and structural characterisation of CdTe crystals grown by Physical Vapour Transport and Bridgman methods

CNR – IMEM Institute

Parma

ITALY

19, 17

ORAL

2

Bak-Misiuk

J.

 

Influence of high temperature – high pressure treatment  on dislocation density in semi-insulating  GaAs and InP

Institute of Physics, PAS

Warsaw

POLAND

16, 16

ORAL

3

Barrios

C.A.

Leakage current in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer

Lab. of Materials and Semiconductor Physics, Royal Institute of Technology

Kista

Sweden

14, 16

ORAL

4

Bert

N. A.

 

Two- and three-dimensional arrays of nanoscale As clusters in low-temperature grown GaAs

 

Ioffe Physico-Technical Institute,

Sankt Petersburg

RUSSIA

17, 15

ORAL

5

Bobrovnikova

I.A

 

Effect of the Si doping and As/Ga flux ratio on the growth of GaAs by low temperature molecular beam epitaxy

Siberian Physical Technical Institute Tomsk State University

RUSSIA

15, 13, 16

ORAL

6

Bobrovnikova

I.A

 

Doping and defect formation in epitaxial GaAs

Siberian Physical Technical Institute Tomsk State University

RUSSIA

14, 14, 15

POSTER

7

Corcessin

D.

Investigation of the defect density of zinc and vanadium doped cadmium telluride

Laboratoire de Génie Electrique de Paris (CNRS), Supelec, Universités Paris 

FRANCE

19, 15

ORAL

8

Feng

P. X.

 

Growth and characterization of ZnO epilayers

 

School of Physics Sydney University,
NSW 2006
AUSTRALIA

withdrawn

 

9

Ferrari

C.

Complete structural and optical characterization of InGaN/GaN multiple quantum wells

CNR – IMEM Institute

Parma

ITALY

17, 16, 20

ORAL

10

Fornari

R.

 

Characterization of GaN/InGaN hetero-structures by SEM and CL

CNR-IMEM Institute, Area delle Scienze 37/A

Parma

ITALY

19, 16

ORAL

11

Alvarez

A.

Photocurrent and photoluminescence in Fe-doped InP

ETSII Universtity of Valladolid

SPAIN

14, 13

POSTER

12

Fujiwara

K.

Competitive capture and escape processes of electrically injected carriers in blue InGaN single quantum well light emitting diodes

Kyushu Institute of Technology

JAPAN

15, 16, 19

ORAL

13

Fujiwara

K.

 

Photoluminescence characterization of interface abruptness of GaAs/AlGaAs quantum wells grown on (411)A and (100) GaAs substrates

Kyushu Institute of Technology

Japan

16, 16

POSTER

14

Grym

J.

 

Novel approaches to LPE preparation of InP semiconductor layers

Institute of Radio Engn. and Electronics

Academy of Sciences of the Czech Republic,

Prague

CZECH REPUBLIC

14, 16, 16

POSTER

15

Gudmundsson

J. T.

Hopping conduction in lithium diffused and annealed  GaAs

 

Science Institute, University of Iceland

Iceland

8, 18, 15, 16

ORAL

16

Horák

M.

 

Single-heterojunction barrier diode at terahertz frequency

University of Tech-nology, Faculty of Electrical Eng. and Communication

Dept. of Micro-electronics, Brno

CZECH REPUBLIC

15, 17,

ORAL

17

Huran

J.

PECVD Nitrogen Doped a-SiC:H Films: Properties

Institute of Electrical Engineering, SAS

Bratislava

SLOVAKIA

17, 13, 15

POSTER

18

Islam

Md. R.

 

Two-dimensional mapping of compo-sition in bulk InxGa1-xAs crystals using photoluminescence

Dept. of Electronics and Information Science, Kyoto Institute of Technology

JAPAN

14, 13

POSTER

19

Kawasaki

K.

 

Non-uniform photocurrent transport and tunneling resonances

in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells

Sendai National College of Technology

JAPAN

19, 15

POSTER

20

Kiesel

P.

Direct Determination of the Built-in Polarization Field in InGaN/GaN Quantum Wells

PARC

U.S.A.

20, 18

ORAL

INVITED

21

Kiesel

P.

A new concept for highly efficient photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers

PARC

U.S.A.

16, 19

ORAL

22

Kim

Bo K.

The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC

Dept. of Electronic Engineering,

Sogang University

KOREA

19, 18

ORAL

23

Levichev

S.

Investigation of morphology and photoelectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

N. I. Lobachevsky University of Nizhny Novgorod

RUSSIA

17, 16

ORAL

24

 

Ligatchev

V.

 

Visible room-temperature photoluminescence of the AlN films prepared  by rf magnetron sputtering

Nanyang Technological University, School of Elctrical and Electronic Engineering

SINGAPORE

19, 12, 16

ORAL

25

Ligatchev

V.

 

Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy

Nanyang Technological University, School of Electrical and Electronic Engineering

SINGAPORE

17, 16, 12

POSTER

26

Liliental-Weber

Z.

Differences and similarities between structural properties  of GaN grown by different growth methods

Lawrence Berkeley National Laboratory

California

U.S.A.

19, 13, 19

ORAL

INVITED

27

Lin

S.

 

Research on Dry Etching and Oxidation of GaAs/AlAs Stack

Institute of Semiconductor

Chinese Academy of Sciences

CHINA

16, 16

ORAL

withdrawn

28

Macháč

P.

Laser technology in the formation of AuPt and AuPtTi contacts

Institute of Chemical Technology in Prague

Department of Solid State Engineering

CZECH REPUBLIC

13, 17

POSTER

29

Mitani

Y.

 

Effects of Surface Deep Levels on Breakdown Characteristics of

Narrowly-Recessed-Gate GaAs MESFETs

Faculty of Systems Engineering

Shibaura Institute of Technology

JAPAN

18, 19

ORAL

30

Orlov

L. K.

 

 

Qantum net formation in porous InGaAs/GaAs multilayers structures

 

Institute for Physics of Microstructures Russian Academe of Sciences 

RUSSIA

15, 13

POSTER

31

Papaioannou

G. J.

 

On the alpha particle induced degradation in n-type GaAs layers

 

University of Athens, Physics Department, Solid State Physics Section

GREECE

18, 15, 18

ORAL

32

Roux

J-F.

Electron and hole trapping parameters of low-temperature-grown GaAs

University of Savoie

LAHC

FRANCE

17, 17

ORAL

33

Ryć

L.

 

Evaluation of GaAs and InP MSM detectors intended for collection of pulsed X-ray emission from laser plasma

Institute of Plasma Physics and Laser Microfusion

Warsaw

POLAND

15, 19

ORAL

34

Seghier

D.

Effects of hydrogenation on AlGaN alloys grown by MOCVD

Science Institute, University of Iceland

ICELAND

15, 20

ORAL

35

Semikina

T.

Examination of surface trapping states on the basis of photocapacitance effect of structure silicon - diamond like carbon film

National Technical University of Ukraine, Faculty of Electronics

UKRAINE

17, 18

ORAL

withdrawn

36

J.

Staňo

Electrical study of 4H-SiC irradiated with swift heavy ions.

Joint Institute for Nuclear Research,

Sankt Petersburg

RUSSIA

17, 16

ORAL

37

Šutta

P.

Lattice stress gradient formation in oxide films deposited on substrates when useed sputtering  techniques

Military Academy SNP, Faculty of Logistics, Dept of Physics

Liptovsky Mikulas

SLOVAKIA

16, 12, 18

ORAL

38

Tolbanov

O.

GaAs for X-imaging and particle detectors

Siberian Physical Technical Institute

RUSSIA

16, 16

ORAL

39

Tyazhev

A.V.

Electric field distribution in chromium compensated GaAs

Siberian Physical Technical Institute

RUSSIA

18, 12

POSTER

40

Yamada

M.

Inspection of residual strain in GaAs single crystal as standard ingot form

Dept. of Electronics and Information Science, Kyoto Institute of Technology

JAPAN.

16, 14, 16

ORAL

41

Vaitkus

J. V

Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN

 

Vilnius University, Institute of  Materials Science and Applied Research

LITHUANIA

16, 13, 12

POSTER

42

Zappettini

A.

Luminescence properties of semi-insulating nominally-undoped CdTe crystals

IMEM-CNR

Parma

ITALY

16, 14, 17

ORAL

43

Zlámal

J.

The influence of Glow-Discharge cleaning of Ge/Pd-GaAs on the specific contact resistivity

 

Institute of Chemical Technology,

Dept. of Solid State Engineering

Prague

CZECH REPUBLIC

12, 19

ORAL

44

Unterrainer

K.

Few-Cycle THz Pulse Generation And Spectroscopy Of Semiconductor Nanostructures

Institute for Solid State Electronics, Technical University Vienna

AUSTRIA

20, 18, 18

ORAL

INVITED

 

45

Baumbach

T.

High quality X-ray imaging for semiconductor wafer characterisation

Fraunhofer- Institut für Zerstörungsfreie Prüfverfahren, EADQ

GERMANY

19, 15, 15

ORAL

INVITED

46

Verma

P.

A step forward to the growth and characterization of compositionally homogeneous InxGa1-xAs bulk crystal

Kyoto Institute of Technology

JAPAN

17, 14, 16

ORAL

47

Jarašiūnas

K.

Deep-trap governed carrier dynamics in semi-insulating crystals

analyzed by time-resolved four-wave mixing technique

Institute of Materials Science and Applied Research

LITHUANIA

18, 16

ORAL

48

Anh

L. Tu

Gamma radiation hardness of bulk semi-insulating GaAs detectors

 

Faculty of Electrical Engineering and Information Technology

Bratislava

SLOVAKIA

15, 17

POSTER

49

Perdochova

A.

Influence of semi-insulating GaAs detector structure to its detection properties

Faculty of Electrical Engineering and Information Technology

SLOVAKIA

12, 19, 15

ORAL

50

Zatko

B.

Temperature influence on the spectrometric performances of the radiation detector based on semi-insulating GaAs

Institute of Electrical Engineering, SAS

Bratislava

SLOVAKIA

12, 16, 16

POSTER

51

Surma

B.

Photoluminescence studies of high purity semi-insulating InP

ITME

Warsaw

Poland

17, 18

POSTER

 

52

Darmo

J.

Terahertz generation in GaAs:As photoconductive emitters

Institut für Festkörperelektronik, Technische Universität

Wien

AUSTRIA

15, 18

POSTER

 

53

Skatkov

L.I.

Study of the Nature of reverse bias electrical conductivity of Nb2O2  insulating films in capacitor structure on niobium

PCB “Argo”, Ltd.

Beer Sheva

ISRAEL

14, 16

POSTER

54

Jagadish

C.

Electrical Isolation of ZnO by Ion Irradiation

Research School of Phys. Sci., Australian National University

Canberra

AUSTRALIA

19, 17

ORAL

INVITED

 

55

Yonenega

I.

Growth and fundamental properties of GeSi bulk crystals

Inst. for Materials Research

Tohoku University

Sendai

JAPAN

15, 19, 16

ORAL

INVITED

56

Jones

T.S.

Controlling the growth and properties of multilayer InAs/GaAs quantum dot structures for long wavelength applications

Centre for Electronic Materials and Devices

Imperial College

London

UNITED KINGDOM

20, 18

ORAL

INVITED

57

Jagadish

C.

Ultrafast carrier trapping in high energy ion implanted indium phosphide

Research School of Phys. Sci., Australian National University

Canberra

AUSTRALIA

14, 17

POSTER

58

Jagadish

C.

Influence of isochronal annealing on the evolution of hole traps in GaAsN epilayers grown by metalorganic chemical vapour deposition

Research School of Phys. Sci., Australian National University

Canberra

AUSTRALIA

17, 18

POSTER

59

Pelfer

P.G.

On the role of electrode technology in performance of radiation detector based on semi-insulating InP

Dept. of Physics

Universtity of Florence and INFN

ITALY

17,19

ORAL

60

Ya-min Lee

J.

The Capacitance-Voltage Characteristics of Metal-Ferroelectric-Insulator-Silicon Structures for Non-Volatile memory applications

Dept. of Electrical Engineering

Tsing-Hua University,

Hsinchu

Taiwan

Republic of China

16, 18

POSTER

61

Ya-min Lee

J.

The Fabrication and Characterisation of Metal-Oxide-Semiconductor Field-Effect-Transistors and Gated Diodes Using (Ba0.5, Sr0.5)TiO3 Gate Dielectric

Dept. of Electrical Engineering

Tsing-Hua University,

Hsinchu

Taiwan

Republic of China

19, 17

ORAL

62

Dubecky

F.

Indication of minority carrier extraction at bulk semi-insulating GaAs/As-implanted and LTG MBE GaAs interface

Institute of Electrical Engineering, SAS

Bratislava

SLOVAKIA

19, 18

ORAL

63

Deligeorgis

G.

Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

 

Microelectronics Research Group

FORTH, IESL and Univ. Crete,

Physics Dept., Heraklion-Crete, Greece

Latest News

17, 18

ORAL

64

Dimakis

E.

High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy

 

Microelectronics Research Group

FORTH, IESL and Univ. Crete,

Physics Dept., Heraklion-Crete, Greece

Latest News

18, 20

ORAL

65

Skriniarova

J.

Photoenhanced Wet Etching of

n-Gallium Nitride

 

Dept. of Microelectronics

Slovak University of Technology
Bratislava

Slovakia

Latest News

17,13

ORAL

66

Bohacek

P.

Electrical properties of semi-insulating GaAs irradiated with neutrons

 

Institute of Electrical Engineering

Slovak Academy of Sciences

Bratislava

Slovak Republic

Latest News

15,14

POSTER