No |
NAME |
TITLE |
INSTITUTION |
EVALUATION |
1 |
Armani N. |
Optical
and structural characterisation of CdTe crystals grown by Physical Vapour
Transport and Bridgman methods |
CNR
– IMEM Institute Parma ITALY |
19, 17 ORAL |
2 |
Bak-Misiuk J. |
Influence of high
temperature – high pressure treatment
on dislocation density in semi-insulating GaAs and InP |
Institute of Physics,
PAS Warsaw POLAND |
16, 16 ORAL |
3 |
Barrios C.A. |
Leakage current in GaAs/AlGaAs-based buried-heterostructure laser
diodes with semi-insulating GaInP:Fe burying layer |
Lab. of Materials and Semiconductor Physics, Royal Institute of
Technology Kista Sweden |
14, 16 ORAL |
4 |
Bert N.
A. |
Two- and three-dimensional
arrays of nanoscale As clusters in low-temperature grown GaAs |
Ioffe
Physico-Technical Institute, Sankt Petersburg RUSSIA |
17, 15 ORAL |
5 |
Bobrovnikova I.A |
Effect of the Si doping
and As/Ga flux ratio on the growth of GaAs by low temperature molecular beam
epitaxy |
Siberian Physical
Technical Institute Tomsk State University RUSSIA |
15, 13, 16 ORAL |
6 |
Bobrovnikova I.A |
Doping and defect
formation in epitaxial GaAs |
Siberian Physical
Technical Institute Tomsk State University RUSSIA |
14, 14, 15 POSTER |
7 |
Corcessin D. |
Investigation of the defect density of zinc and vanadium doped cadmium
telluride |
Laboratoire de Génie Electrique de Paris (CNRS), Supelec, Universités
Paris FRANCE |
19, 15 ORAL |
8 |
Feng P. X. |
Growth and
characterization of ZnO epilayers |
School of Physics
Sydney University, |
withdrawn |
9 |
Ferrari C. |
Complete structural and optical characterization
of InGaN/GaN multiple quantum wells |
CNR
– IMEM Institute Parma ITALY |
17, 16, 20 ORAL |
10 |
Fornari
R. |
Characterization of GaN/InGaN hetero-structures by SEM and CL |
CNR-IMEM Institute, Area
delle Scienze 37/A Parma ITALY |
19, 16 ORAL |
11 |
Alvarez A. |
Photocurrent and photoluminescence in Fe-doped InP |
ETSII Universtity of Valladolid SPAIN |
14, 13 POSTER |
12 |
Fujiwara K. |
Competitive capture and escape processes
of electrically injected carriers in blue InGaN single quantum well light
emitting diodes |
Kyushu Institute of Technology JAPAN |
15, 16, 19 ORAL |
13 |
Fujiwara K. |
Photoluminescence characterization
of interface abruptness of GaAs/AlGaAs quantum wells grown on (411)A and
(100) GaAs substrates |
Kyushu Institute of Technology Japan |
16, 16 POSTER |
14 |
Grym J. |
Novel approaches to LPE
preparation of InP semiconductor layers |
Institute
of Radio Engn. and Electronics Academy of Sciences of the Czech Republic, Prague CZECH REPUBLIC |
14, 16, 16 POSTER |
15 |
Gudmundsson J. T. |
Hopping
conduction in lithium diffused and annealed
GaAs |
Science Institute,
University of Iceland Iceland |
8, 18, 15,
16 ORAL |
16 |
Horák M. |
Single-heterojunction barrier diode at terahertz frequency |
University of Tech-nology, Faculty of Electrical Eng. and
Communication Dept. of
Micro-electronics, Brno CZECH REPUBLIC |
15, 17, ORAL |
17 |
Huran J. |
PECVD Nitrogen Doped
a-SiC:H Films: Properties |
Institute of
Electrical Engineering, SAS Bratislava SLOVAKIA |
17, 13, 15 POSTER |
18 |
Islam Md. R. |
Two-dimensional
mapping of compo-sition in bulk InxGa1-xAs crystals
using photoluminescence |
Dept. of Electronics
and Information Science, Kyoto Institute of Technology JAPAN |
14, 13 POSTER |
19 |
Kawasaki K. |
Non-uniform
photocurrent transport and tunneling resonances in composite
InGaAs/AlGaAs and GaAs/AlGaAs quantum wells |
Sendai National
College of Technology JAPAN |
19, 15 POSTER |
20 |
Kiesel P. |
Direct Determination
of the Built-in Polarization Field in InGaN/GaN Quantum Wells |
PARC U.S.A. |
20, 18 ORAL INVITED |
21 |
Kiesel P. |
A new concept for highly efficient photomixers based on quasi
ballistic transport and thin LT-GaAs recombination layers |
PARC U.S.A. |
16, 19 ORAL |
22 |
Kim Bo K. |
The thermal stability
of Ni and Ni/Au ohmic contacts to n-type 4H-SiC |
Dept. of Electronic
Engineering, Sogang University KOREA |
19, 18 ORAL |
23 |
Levichev S. |
Investigation of
morphology and photoelectronic properties of InGaAs/GaAs heterostructures
with combined quantum well and self-organized quantum dot layers |
N. I. Lobachevsky
University of Nizhny Novgorod RUSSIA |
17, 16 ORAL |
24 |
Ligatchev V. |
Visible
room-temperature photoluminescence of the AlN films prepared by rf magnetron sputtering |
Nanyang Technological University, School of
Elctrical and Electronic Engineering SINGAPORE |
19, 12, 16 ORAL |
25 |
Ligatchev V. |
Electronic spectrum of
defects in SiOCH dielectric films measured by deep level transient
spectroscopy |
Nanyang Technological University, School of Electrical
and Electronic Engineering SINGAPORE |
17, 16, 12 POSTER |
26 |
Liliental-Weber Z. |
Differences and
similarities between structural properties
of GaN grown by different growth methods |
Lawrence Berkeley
National Laboratory California U.S.A. |
19, 13, 19 ORAL INVITED |
27 |
Lin S. |
Research on Dry
Etching and Oxidation of GaAs/AlAs Stack |
Institute of
Semiconductor Chinese Academy of
Sciences CHINA |
16, 16 ORAL withdrawn |
28 |
Macháč P. |
Laser technology in the formation of AuPt and AuPtTi contacts |
Institute of Chemical
Technology in Prague Department of Solid
State Engineering CZECH REPUBLIC |
13, 17 POSTER |
29 |
Mitani Y. |
Effects of Surface Deep
Levels on Breakdown Characteristics of Narrowly-Recessed-Gate
GaAs MESFETs |
Faculty of Systems
Engineering Shibaura Institute of
Technology JAPAN |
18, 19 ORAL |
30 |
Orlov
L. K. |
Qantum net formation
in porous InGaAs/GaAs multilayers structures |
Institute for Physics of Microstructures Russian Academe of
Sciences RUSSIA |
15, 13 POSTER |
31 |
Papaioannou G. J. |
On the alpha particle induced degradation in n-type GaAs
layers
|
University of Athens, Physics Department, Solid State Physics Section GREECE |
18, 15, 18 ORAL |
32 |
Roux J-F. |
Electron and hole trapping parameters of low-temperature-grown GaAs |
University of Savoie LAHC FRANCE |
17, 17 ORAL |
33 |
Ryć L. |
Evaluation of GaAs and InP MSM detectors intended for collection of
pulsed X-ray emission from laser plasma |
Institute of Plasma
Physics and Laser Microfusion Warsaw POLAND |
15, 19 ORAL |
34 |
Seghier D. |
Effects of hydrogenation on AlGaN alloys grown by MOCVD |
Science Institute,
University of Iceland ICELAND |
15, 20 ORAL |
35 |
Semikina T. |
Examination of surface
trapping states on the basis of photocapacitance effect of structure silicon -
diamond like carbon film |
National Technical
University of Ukraine, Faculty of Electronics UKRAINE |
17, 18 ORAL withdrawn |
36 |
J. Staňo
|
Electrical study of 4H-SiC irradiated with swift heavy ions. |
Joint Institute for
Nuclear Research, Sankt Petersburg RUSSIA |
17, 16 ORAL |
37 |
Šutta P. |
Lattice stress
gradient formation in oxide films deposited on substrates when useed
sputtering techniques |
Military Academy SNP,
Faculty of Logistics, Dept of Physics Liptovsky Mikulas SLOVAKIA |
16, 12, 18 ORAL |
38 |
Tolbanov O. |
GaAs for X-imaging and
particle detectors |
Siberian Physical
Technical Institute RUSSIA |
16, 16 ORAL |
39 |
Tyazhev A.V. |
Electric field
distribution in chromium compensated GaAs |
Siberian Physical Technical
Institute RUSSIA |
18, 12 POSTER |
40 |
Yamada
M. |
Inspection
of residual strain in GaAs single crystal as standard ingot form |
Dept. of Electronics
and Information Science, Kyoto Institute of Technology JAPAN. |
16, 14, 16 ORAL |
41 |
Vaitkus
J. V |
Space charge effects and
carrier capture transient behaviour in semi-insulating GaAs and GaN |
Vilnius
University, Institute of Materials
Science and Applied Research LITHUANIA |
16,
13, 12 POSTER |
42 |
Zappettini A. |
Luminescence properties of
semi-insulating nominally-undoped CdTe crystals |
IMEM-CNR Parma ITALY |
16, 14, 17 ORAL |
43 |
Zlámal J. |
The influence of Glow-Discharge cleaning of Ge/Pd-GaAs on the specific
contact resistivity |
Institute of Chemical Technology,
Dept. of Solid State
Engineering Prague CZECH REPUBLIC |
12, 19 ORAL |
44 |
Unterrainer K. |
Few-Cycle THz Pulse
Generation And Spectroscopy Of Semiconductor Nanostructures |
Institute for Solid State Electronics, Technical University Vienna AUSTRIA |
20, 18, 18 ORAL INVITED |
45 |
Baumbach T. |
High quality X-ray
imaging for semiconductor wafer characterisation |
Fraunhofer- Institut
für Zerstörungsfreie Prüfverfahren, EADQ GERMANY |
19, 15, 15 ORAL INVITED |
46 |
Verma P. |
A step forward to the
growth and characterization of compositionally homogeneous InxGa1-xAs
bulk crystal |
Kyoto Institute of
Technology JAPAN |
17, 14, 16 ORAL |
47 |
Jarašiūnas K. |
Deep-trap governed
carrier dynamics in semi-insulating crystals analyzed by
time-resolved four-wave mixing technique |
Institute of Materials
Science and Applied Research LITHUANIA |
18, 16 ORAL |
48 |
Anh L. Tu |
Gamma radiation hardness of bulk semi-insulating
GaAs detectors |
Faculty of Electrical
Engineering and Information Technology Bratislava SLOVAKIA |
15, 17 POSTER |
49 |
Perdochova A. |
Influence of
semi-insulating GaAs detector structure to its detection properties |
Faculty of Electrical
Engineering and Information Technology SLOVAKIA |
12, 19, 15 ORAL |
50 |
Zatko
B. |
Temperature influence
on the spectrometric performances of the radiation detector based on
semi-insulating GaAs |
Institute of Electrical
Engineering, SAS Bratislava SLOVAKIA |
12, 16, 16 POSTER |
51 |
Surma B. |
Photoluminescence
studies of high purity semi-insulating InP |
ITME Warsaw Poland |
17, 18 POSTER |
52 |
Darmo J. |
Terahertz generation
in GaAs:As photoconductive emitters |
Institut für Festkörperelektronik, Technische
Universität Wien AUSTRIA |
15, 18 POSTER |
53 |
Skatkov L.I. |
Study of the Nature of
reverse bias electrical conductivity of Nb2O2 insulating films in capacitor structure on
niobium |
PCB “Argo”, Ltd. Beer Sheva ISRAEL |
14, 16 POSTER |
54 |
Jagadish C. |
Electrical Isolation
of ZnO by Ion Irradiation |
Research School of Phys. Sci., Australian
National University Canberra AUSTRALIA |
19, 17 ORAL INVITED |
55 |
Yonenega I. |
Growth and fundamental
properties of GeSi bulk crystals |
Inst. for Materials Research Tohoku University Sendai JAPAN |
15, 19, 16 ORAL INVITED |
56 |
Jones T.S. |
Controlling the growth
and properties of multilayer InAs/GaAs quantum dot structures for long
wavelength applications |
Centre for Electronic Materials and Devices Imperial College London UNITED KINGDOM |
20, 18 ORAL INVITED |
57 |
Jagadish C. |
Ultrafast carrier
trapping in high energy ion implanted indium phosphide |
Research School of Phys. Sci., Australian
National University Canberra AUSTRALIA |
14, 17 POSTER |
58 |
Jagadish C. |
Influence of
isochronal annealing on the evolution of hole traps in GaAsN epilayers grown
by metalorganic chemical vapour deposition |
Research School of Phys. Sci., Australian
National University Canberra AUSTRALIA |
17, 18 POSTER |
59 |
Pelfer P.G. |
On the role of
electrode technology in performance of radiation detector based on
semi-insulating InP |
Dept. of Physics Universtity of Florence and INFN ITALY |
17,19 ORAL |
60 |
Ya-min Lee J. |
The
Capacitance-Voltage Characteristics of Metal-Ferroelectric-Insulator-Silicon Structures
for Non-Volatile memory applications |
Dept. of Electrical Engineering Tsing-Hua University, Hsinchu Taiwan Republic of China |
16, 18 POSTER |
61 |
Ya-min Lee J. |
The Fabrication and
Characterisation of Metal-Oxide-Semiconductor Field-Effect-Transistors and
Gated Diodes Using (Ba0.5, Sr0.5)TiO3 Gate Dielectric |
Dept. of Electrical Engineering Tsing-Hua University, Hsinchu Taiwan Republic of China |
19, 17 ORAL |
62 |
Dubecky F. |
Indication of minority
carrier extraction at bulk semi-insulating GaAs/As-implanted and LTG MBE GaAs
interface |
Institute of
Electrical Engineering, SAS Bratislava SLOVAKIA |
19, 18 ORAL |
63 |
Deligeorgis G. |
Properties of GaAs/Si heterostructure material
fabricated by low temperature wafer bonding using a spin-on-glass
intermediate layer |
Microelectronics
Research Group FORTH, IESL and Univ.
Crete, Physics Dept.,
Heraklion-Crete, Greece |
Latest News 17, 18 ORAL |
64 |
Dimakis E. |
High quality quaternary InAlGaN
alloys grown by plasma-assisted molecular beam epitaxy |
Microelectronics
Research Group FORTH, IESL and Univ.
Crete, Physics Dept.,
Heraklion-Crete, Greece |
Latest News 18, 20 ORAL |
65 |
Skriniarova J. |
Photoenhanced Wet
Etching of n-Gallium Nitride |
Dept. of
Microelectronics Slovak University of
Technology Slovakia |
Latest News 17,13 ORAL |
66 |
Bohacek P. |
Electrical properties
of semi-insulating GaAs irradiated with neutrons |
Institute of
Electrical Engineering Slovak Academy of
Sciences Bratislava Slovak Republic |
Latest News 15,14 POSTER |