LIST OF KEY INVITED SPEAKERS
(35+5* minutes oral presentation)

M. Kaminska, Warsaw University, Poland,
"LT GaMnAs and GaMnN - prospect materials for spintronic"

N.F. Chen, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
"Space-grown SI GaAs and its application"

Ch. Tu, University of California (San Diego) USA
"Low-Bandgap Nitrides: Issues and Applications"

J. Champlain, University of California (Santa Barbara), USA
"LT(Al)GaAs and Al(Ga)As Oxides for Electronic Applications"

P. Lefebvre, Montpellier University, France
"Optical properties of group-III nitride based quantum wells and quantum boxes"

J. Ludwig, A. Ludwig's University, Freiburg, Germany
"GaAs sensor systems for medical applications"

U. Sahr, University of Erlangen, Germany
"Growth of InP Substrate Crystals by the Vertical Gradient Freeze Technique"

M. Eickhoff, W. Schottky Institute, Technical University Muenchen, Germany
"Novel sensor applications of III-nitrides"

L. Samuelson, Lund University, Sweden
"On one-dimensional assembly of quantum structures"

A. Krost, Megdeburg University, Germany
"Heteroepitaxy of GaN on Si(111)"


LIST OF ADDITIONAL INVITED SPEAKERS
(25+5* minutes presentation)

P. Verma, Japan
"A step forward to the growth and characterization of compositionally homogeneous InxGa1-xAs bulk crystal"

T. Baumbach, Germany
"High quality X-ray imaging for semiconductor wafer characterisation"

P. Kiesel, Germany
"Direct Determination of the Built-in Polarization Field in InGaN/GaN Quantum Wells"

Z.L. Weber, USA
"Differences and similarities between structural properties of GaN grown by different growth methods"

C. Jagadish, Australia
"Electrical Isolation of ZnO by Ion Irradiation"

K. Unterrainer, Austria
"Few-Cycle THz Pulse Generation And Spectroscopy of Semiconductor Nanostructures"
I. Yonenaga, Japan
"Growth and fundamental properties of GeSi bulk crystals"

***Summary Table of Abstracts Evaluation***

(Oral presentation 15+5* minutes)

*5 minutes is reserved for discussion

***DRAFT PROGRAMME SCHEDULE***

***SIMC-XII-2002 PROGRAMME***